Datasheet and documentation for electronic component SGS-Thomson Microelectronics IRF822FI

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Electronic component partname: IRF822FI Description IRF822FI: N-channel enhancement mode power MOS transistor, 500V, 1.9A Manufacturer: SGS-Thomson Microelectronics Temperature range: Min: -65°C | Max: 150°C Chip package & pins: ISOWATT220 (Pins: 3) Datasheet file format: PDF (Requires Adobe Acrobat Reader) Datasheet size IRF822FI datasheet: 169Kb Download IRF822FI datasheet: IRF822FI.PDF

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