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Datasheets International Rectifier

Part name
Description
Manufacturer
Package
Pins
Temp. Range
PDF datasheet
IRFZ48VSPower MOSFET, 60V, 72AInternational RectifierD2PAK3-55°C | 175°CIRFZ48VS datasheet (282K)
IRG4BC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational RectifierN/A3-55°C | 150°CIRG4BC10K datasheet (158K)
IRG4BC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational RectifierN/A3-55°C | 150°CIRG4BC10KD datasheet (210K)
IRG4BC10SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational RectifierN/A3-55°C | 150°CIRG4BC10S datasheet (157K)
IRG4BC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational RectifierN/A3-55°C | 150°CIRG4BC10SD datasheet (210K)
IRG4BC10SD-LInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational RectifierN/A3-55°C | 150°CIRG4BC10SD-L datasheet (217K)
IRG4BC10SD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational RectifierDDPak3-55°C | 150°CIRG4BC10SD-S datasheet (217K)
IRG4BC10UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.150V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.International RectifierN/A3-55°C | 150°CIRG4BC10UD datasheet (184K)
IRG4BC15MDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.88V @ VGE = 15V, IC = 8.5AInternational RectifierN/A3-55°C | 150°CIRG4BC15MD datasheet (256K)
IRG4BC15UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8AInternational RectifierN/A3-55°C | 150°CIRG4BC15UD datasheet (255K)