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Datasheets International Rectifier

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IRG4BC15UD-LInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8AInternational RectifierN/A3-55°C | 150°CIRG4BC15UD-L datasheet (210K)
IRG4BC15UD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8AInternational RectifierDDPak3-55°C | 150°CIRG4BC15UD-S datasheet (210K)
IRG4BC15UD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8AInternational RectifierDDPak3-55°C | 150°CIRG4BC15UD-S datasheet (210K)
IRG4BC20Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0AInternational RectifierN/A3-55°C | 150°CIRG4BC20 datasheet (161K)
IRG4BC20FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0AInternational RectifierN/A3-55°C | 150°CIRG4BC20FD datasheet (222K)
IRG4BC20FD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0AInternational RectifierDDPak3-55°C | 150°CIRG4BC20FD-S datasheet (222K)
IRG4BC20KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0AInternational RectifierN/A3-55°C | 150°CIRG4BC20K datasheet (138K)
IRG4BC20K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0AInternational RectifierDDPak3-55°C | 150°CIRG4BC20K-S datasheet (162K)
IRG4BC20KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0AInternational RectifierN/A3-55°C | 150°CIRG4BC20KD datasheet (199K)
IRG4BC20KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0AInternational RectifierDDPak3-55°C | 150°CIRG4BC20KD-S datasheet (222K)