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Datasheets International Rectifier

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Description
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IRG4BC20MDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11AInternational RectifierN/A3-55°C | 150°CIRG4BC20MD datasheet (251K)
IRG4BC20MD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11AInternational RectifierDDPak3-55°C | 150°CIRG4BC20MD-S datasheet (200K)
IRG4BC20SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10AInternational RectifierN/A3-55°C | 150°CIRG4BC20S datasheet (157K)
IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10AInternational RectifierN/A3-55°C | 150°CIRG4BC20SD datasheet (287K)
IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10AInternational RectifierN/A3-55°C | 150°CIRG4BC20SD datasheet (287K)
IRG4BC20SD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10AInternational RectifierDDPak3-55°C | 150°CIRG4BC20SD-S datasheet (382K)
IRG4BC20UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5AInternational RectifierN/A3-55°C | 150°CIRG4BC20U datasheet (167K)
IRG4BC20UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5AInternational RectifierN/A3-55°C | 150°CIRG4BC20UD datasheet (236K)
IRG4BC20WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5AInternational RectifierN/A3-55°C | 150°CIRG4BC20W datasheet (130K)
IRG4BC20W-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5AInternational RectifierDDPak3-55°C | 150°CIRG4BC20W-S datasheet (152K)