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Datasheets International Rectifier

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IRG4BC30Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17AInternational RectifierN/A3-55°C | 150°CIRG4BC30 datasheet (167K)
IRG4BC30FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17AInternational RectifierN/A3-55°C | 150°CIRG4BC30FD datasheet (412K)
IRG4BC30KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16AInternational RectifierN/A3-55°C | 150°CIRG4BC30K datasheet (137K)
IRG4BC30K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16AInternational RectifierDDPak3-55°C | 150°CIRG4BC30K-S datasheet (161K)
IRG4BC30K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16AInternational RectifierDDPak3-55°C | 150°CIRG4BC30K-S datasheet (161K)
IRG4BC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16AInternational RectifierN/A3-55°C | 150°CIRG4BC30KD datasheet (196K)
IRG4BC30KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16AInternational RectifierDDPak3-55°C | 150°CIRG4BC30KD-S datasheet (225K)
IRG4BC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18AInternational RectifierN/A3-55°C | 150°CIRG4BC30S datasheet (161K)
IRG4BC30UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12AInternational RectifierN/A3-55°C | 150°CIRG4BC30U datasheet (167K)
IRG4BC30U-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12AInternational RectifierDDPak3-55°C | 150°CIRG4BC30U-S datasheet (308K)