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Datasheets International Rectifier

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Description
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PDF datasheet
IRG4PSH71KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.97V @ VGE = 15V, IC = 42AInternational RectifierN/A3-55°C | 150°CIRG4PSH71KD datasheet (200K)
IRG4RC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational RectifierN/A3-55°C | 150°CIRG4RC10K datasheet (134K)
IRG4RC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational RectifierN/A3-55°C | 150°CIRG4RC10K datasheet (134K)
IRG4RC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational RectifierN/A3-55°C | 150°CIRG4RC10KD datasheet (190K)
IRG4RC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0AInternational RectifierN/A3-55°C | 150°CIRG4RC10KD datasheet (190K)
IRG4RC10SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational RectifierN/A3-55°C | 150°CIRG4RC10S datasheet (120K)
IRG4RC10SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational RectifierN/A3-55°C | 150°CIRG4RC10S datasheet (120K)
IRG4RC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational RectifierN/A3-55°C | 150°CIRG4RC10SD datasheet (189K)
IRG4RC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational RectifierN/A3-55°C | 150°CIRG4RC10SD datasheet (189K)
IRG4RC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0AInternational RectifierN/A3-55°C | 150°CIRG4RC10SD datasheet (189K)