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| 2N5400S | PNP transistor for general purpose and high voltage applications | Korea Electronics Co., Ltd. | N/A | 3 | -55°C | 150°C | 2N5400S datasheet (147K) |
| 2N5401 | PNP transistor for general purpose and high voltage applications | Korea Electronics Co., Ltd. | N/A | 3 | -55°C | 150°C | 2N5401 datasheet (145K) |
| 2N5401C | PNP transistor for general purpose and high voltage applications | Korea Electronics Co., Ltd. | N/A | 3 | -55°C | 150°C | 2N5401C datasheet (160K) |
| 2N5401S | PNP transistor for general purpose and high voltage applications | Korea Electronics Co., Ltd. | N/A | 3 | -55°C | 150°C | 2N5401S datasheet (147K) |
| 2N5550 | NPN transistor for general purpose and high voltage applications | Korea Electronics Co., Ltd. | N/A | 3 | -55°C | 150°C | 2N5550 datasheet (147K) |
| 2N5550S | NPN transistor for general purpose and high voltage applications | Korea Electronics Co., Ltd. | N/A | 3 | -55°C | 150°C | 2N5550S datasheet (152K) |
| 2N5551 | NPN transistor for general purpose and high voltage applications | Korea Electronics Co., Ltd. | N/A | 3 | -55°C | 150°C | 2N5551 datasheet (146K) |
| 2N5551C | NPN transistor for general purpose and high voltage applications | Korea Electronics Co., Ltd. | N/A | 3 | -55°C | 150°C | 2N5551C datasheet (164K) |
| 2N5551S | NPN transistor for general purpose and high voltage applications | Korea Electronics Co., Ltd. | N/A | 3 | -55°C | 150°C | 2N5551S datasheet (150K) |
| B10A100VIC | Schottky Barrier Diode | Korea Electronics Co., Ltd. | N/A | - | N/A | N/A | B10A100VIC datasheet (36K) |