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CR05AS | 0.5A semiconductor for low power use, non-insulated, planar passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 125°C | CR05AS datasheet (67K) |
CR08AS | 0.8A semiconductor for low power use, non-insulated, glass passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 125°C | CR08AS datasheet (76K) |
CR10C | 10A semiconductor for medium power use, non-insulated, glass passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -30°C | 125°C | CR10C datasheet (59K) |
CR10CY | 10A semiconductor for medium power inverter use, non-insulated, glass passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -30°C | 125°C | CR10CY datasheet (61K) |
CR12AM | 12A semiconductor for medium power use, non-insulated, glass passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 125°C | CR12AM datasheet (68K) |
CR12MB | 12A semiconductor for medium power use, non-insulated, glass passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 125°C | CR12MB datasheet (66K) |
CR20EY | 20A semiconductor for medium power inverter use, non-insulated, glass passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -30°C | 125°C | CR20EY datasheet (67K) |
CR20F | 20A semiconductor for medium power use, non-insulated, glass passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -30°C | 125°C | CR20F datasheet (64K) |
CR2AM | 2A semiconductor for low power use, non-insulated, glass passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 125°C | CR2AM datasheet (72K) |
CR2AM-8A | 0.3A semiconductor for low power use, glass passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 125°C | CR2AM-8A datasheet (67K) |