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| FG6000AU-120D | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 2 | -40°C | 125°C | FG6000AU-120D datasheet (59K) |
| FGR3000CV-90DA | Reverse-condition GTO thyristor for high power inverter use press pack type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 2 | -40°C | 125°C | FGR3000CV-90DA datasheet (79K) |
| FGR3000FX-90DA | Reverse-condition GTO thyristor for high power inverter use press pack type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 2 | -40°C | 125°C | FGR3000FX-90DA datasheet (82K) |
| FGR4000HX-90DS | Reverse-condition GTO thyristor for high power inverter use press pack type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 2 | -40°C | 125°C | FGR4000HX-90DS datasheet (71K) |
| FK10KM-10 | 10A power mosfet for high-speed switching use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -55°C | 150°C | FK10KM-10 datasheet (54K) |
| FK10KM-12 | 10A power mosfet for high-speed switching use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -55°C | 150°C | FK10KM-12 datasheet (54K) |
| FK10KM-9 | 10A power mosfet for high-speed switching use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -55°C | 150°C | FK10KM-9 datasheet (54K) |
| FK10SM-10 | 10A power mosfet for high-speed switching use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -55°C | 150°C | FK10SM-10 datasheet (54K) |
| FK10SM-12 | 10A power mosfet for high-speed switching use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -55°C | 150°C | FK10SM-12 datasheet (53K) |
| FK10SM-9 | 10A power mosfet for high-speed switching use | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -55°C | 150°C | FK10SM-9 datasheet (54K) |