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MGSF3454XT1 | Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor | Motorola | TSOP | 6 | -55°C | 150°C | MGSF3454XT1 datasheet (138K) |
MGSF3454XT3 | Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor | Motorola | TSOP | 6 | -55°C | 150°C | MGSF3454XT3 datasheet (138K) |
MGSF3455VT1 | Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor | Motorola | TSOP | 6 | -55°C | 150°C | MGSF3455VT1 datasheet (126K) |
MGSF3455VT3 | Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor | Motorola | TSOP | 6 | -55°C | 150°C | MGSF3455VT3 datasheet (126K) |
MGSF3455XT1 | Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor | Motorola | TSOP | 6 | -55°C | 150°C | MGSF3455XT1 datasheet (85K) |
MGSF3455XT3 | Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor | Motorola | TSOP | 6 | -55°C | 150°C | MGSF3455XT3 datasheet (85K) |
MGV12N120D | Insulated gate bipolar transistor | Motorola | N/A | 3 | -55°C | 150°C | MGV12N120D datasheet (79K) |
MGW12N120 | Insulated gate bipolar transistor | Motorola | N/A | 3 | -55°C | 150°C | MGW12N120 datasheet (228K) |
MGW12N120D | Insulated gate bipolar transistor with anti-parallel diode | Motorola | N/A | 3 | -55°C | 150°C | MGW12N120D datasheet (250K) |
MGW20N120 | Insulated gate bipolar transistor | Motorola | N/A | 3 | -55°C | 150°C | MGW20N120 datasheet (231K) |