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KM416C254DJ-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period | Samsung Electronic | SOJ | 40 | 0°C | 70°C | KM416C254DJ-6 datasheet (840K) |
KM416C254DJ-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period | Samsung Electronic | SOJ | 40 | 0°C | 70°C | KM416C254DJ-7 datasheet (840K) |
KM416C254DJL-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh | Samsung Electronic | SOJ | 40 | 0°C | 70°C | KM416C254DJL-5 datasheet (840K) |
KM416C254DJL-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh | Samsung Electronic | SOJ | 40 | 0°C | 70°C | KM416C254DJL-6 datasheet (840K) |
KM416C254DJL-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh | Samsung Electronic | SOJ | 40 | 0°C | 70°C | KM416C254DJL-7 datasheet (840K) |
KM416C254DT-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period | Samsung Electronic | TSOP II | 40 | 0°C | 70°C | KM416C254DT-5 datasheet (840K) |
KM416C254DT-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period | Samsung Electronic | TSOP II | 40 | 0°C | 70°C | KM416C254DT-6 datasheet (840K) |
KM416C254DT-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period | Samsung Electronic | TSOP II | 40 | 0°C | 70°C | KM416C254DT-7 datasheet (840K) |
KM416C254DTL-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh | Samsung Electronic | TSOP II | 40 | 0°C | 70°C | KM416C254DTL-5 datasheet (840K) |
KM416C254DTL-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh | Samsung Electronic | TSOP II | 40 | 0°C | 70°C | KM416C254DTL-6 datasheet (840K) |