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| KM416RD8AD-RK70 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | KM416RD8AD-RK70 datasheet (3M) |
| KM416RD8AD-RK80 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | KM416RD8AD-RK80 datasheet (3M) |
| KM416RD8AS-RM80 | 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). | Samsung Electronic | microBGA | 54 | 0°C | 90°C | KM416RD8AS-RM80 datasheet (3M) |
| KM416RD8AS-SM80 | 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). | Samsung Electronic | microBGA | 54 | 0°C | 90°C | KM416RD8AS-SM80 datasheet (3M) |
| KM416S8030BT-G/F10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3) | Samsung Electronic | TSOP (II) | 54 | 0°C | 70°C | KM416S8030BT-G/F10 datasheet (133K) |
| KM416S8030BT-G/F8 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3) | Samsung Electronic | TSOP (II) | 54 | 0°C | 70°C | KM416S8030BT-G/F8 datasheet (133K) |
| KM416S8030BT-G/FA | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 133 MHz (CL=3) | Samsung Electronic | TSOP (II) | 54 | 0°C | 70°C | KM416S8030BT-G/FA datasheet (133K) |
| KM416S8030BT-G/FH | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2) | Samsung Electronic | TSOP (II) | 54 | 0°C | 70°C | KM416S8030BT-G/FH datasheet (133K) |
| KM416S8030BT-G/FL | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=3) | Samsung Electronic | TSOP (II) | 54 | 0°C | 70°C | KM416S8030BT-G/FL datasheet (133K) |
| KM416S8030T-G/F10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz | Samsung Electronic | TSOP (II) | 54 | 0°C | 70°C | KM416S8030T-G/F10 datasheet (116K) |