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KM416V1004BT-5 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung Electronic | TSOP II | 44 | 0°C | 70°C | KM416V1004BT-5 datasheet (2M) |
KM416V1004BT-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung Electronic | TSOP II | 44 | 0°C | 70°C | KM416V1004BT-6 datasheet (2M) |
KM416V1004BT-7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung Electronic | TSOP II | 44 | 0°C | 70°C | KM416V1004BT-7 datasheet (2M) |
KM416V1004BT-L5 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung Electronic | TSOP II | 44 | 0°C | 70°C | KM416V1004BT-L5 datasheet (2M) |
KM416V1004BT-L6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung Electronic | TSOP II | 44 | 0°C | 70°C | KM416V1004BT-L6 datasheet (2M) |
KM416V1004BT-L7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung Electronic | TSOP II | 44 | 0°C | 70°C | KM416V1004BT-L7 datasheet (2M) |
KM416V1004CJ-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms | Samsung Electronic | SOJ | 42 | 0°C | 70°C | KM416V1004CJ-45 datasheet (804K) |
KM416V1004CJ-5 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung Electronic | SOJ | 42 | 0°C | 70°C | KM416V1004CJ-5 datasheet (1M) |
KM416V1004CJ-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms | Samsung Electronic | SOJ | 42 | 0°C | 70°C | KM416V1004CJ-50 datasheet (804K) |
KM416V1004CJ-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung Electronic | SOJ | 42 | 0°C | 70°C | KM416V1004CJ-6 datasheet (1M) |