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KM416V1004CJ-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms | Samsung Electronic | SOJ | 42 | 0°C | 70°C | KM416V1004CJ-60 datasheet (804K) |
KM416V1004CJ-L5 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung Electronic | SOJ | 42 | 0°C | 70°C | KM416V1004CJ-L5 datasheet (1M) |
KM416V1004CJ-L6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung Electronic | SOJ | 42 | 0°C | 70°C | KM416V1004CJ-L6 datasheet (1M) |
KM416V1004CJL-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh | Samsung Electronic | SOJ | 42 | 0°C | 70°C | KM416V1004CJL-45 datasheet (804K) |
KM416V1004CJL-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh | Samsung Electronic | SOJ | 42 | 0°C | 70°C | KM416V1004CJL-50 datasheet (804K) |
KM416V1004CJL-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh | Samsung Electronic | SOJ | 42 | 0°C | 70°C | KM416V1004CJL-60 datasheet (804K) |
KM416V1004CT-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms | Samsung Electronic | TSOP | 44 | 0°C | 70°C | KM416V1004CT-45 datasheet (804K) |
KM416V1004CT-5 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung Electronic | TSOP II | 44 | 0°C | 70°C | KM416V1004CT-5 datasheet (1M) |
KM416V1004CT-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms | Samsung Electronic | TSOP | 44 | 0°C | 70°C | KM416V1004CT-50 datasheet (804K) |
KM416V1004CT-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung Electronic | TSOP II | 44 | 0°C | 70°C | KM416V1004CT-6 datasheet (1M) |