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KM416V1204CT-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms | Samsung Electronic | TSOP | 44 | 0°C | 70°C | KM416V1204CT-50 datasheet (804K) |
KM416V1204CT-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung Electronic | TSOP II | 44 | 0°C | 70°C | KM416V1204CT-6 datasheet (1M) |
KM416V1204CT-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms | Samsung Electronic | TSOP | 44 | 0°C | 70°C | KM416V1204CT-60 datasheet (804K) |
KM416V1204CT-L5 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns | Samsung Electronic | TSOP II | 44 | 0°C | 70°C | KM416V1204CT-L5 datasheet (1M) |
KM416V1204CT-L6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung Electronic | TSOP II | 44 | 0°C | 70°C | KM416V1204CT-L6 datasheet (1M) |
KM416V1204CTL-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh | Samsung Electronic | TSOP | 44 | 0°C | 70°C | KM416V1204CTL-50 datasheet (804K) |
KM416V1204CTL-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh | Samsung Electronic | TSOP | 44 | 0°C | 70°C | KM416V1204CTL-60 datasheet (804K) |
KM416V254DJ-5 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period | Samsung Electronic | SOJ | 40 | 0°C | 70°C | KM416V254DJ-5 datasheet (840K) |
KM416V254DJ-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period | Samsung Electronic | SOJ | 40 | 0°C | 70°C | KM416V254DJ-6 datasheet (840K) |
KM416V254DJ-7 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period | Samsung Electronic | SOJ | 40 | 0°C | 70°C | KM416V254DJ-7 datasheet (840K) |