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| KM416V4104BSL-45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | KM416V4104BSL-45 datasheet (806K) |
| KM416V4104BSL-5 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | KM416V4104BSL-5 datasheet (806K) |
| KM416V4104BSL-6 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | KM416V4104BSL-6 datasheet (806K) |
| KM416V4104CS-45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | KM416V4104CS-45 datasheet (808K) |
| KM416V4104CS-50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | KM416V4104CS-50 datasheet (808K) |
| KM416V4104CS-60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | KM416V4104CS-60 datasheet (808K) |
| KM416V4104CS-L45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | KM416V4104CS-L45 datasheet (808K) |
| KM416V4104CS-L50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | KM416V4104CS-L50 datasheet (808K) |
| KM416V4104CS-L60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung Electronic | TSOP II | 50 | 0°C | 70°C | KM416V4104CS-L60 datasheet (808K) |
| KM418RD8AC-RG60 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | KM418RD8AC-RG60 datasheet (3M) |