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| KM418RD8AC-RK70 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | KM418RD8AC-RK70 datasheet (3M) |
| KM418RD8AC-RK80 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | KM418RD8AC-RK80 datasheet (3M) |
| KM418RD8AD-RG60 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | KM418RD8AD-RG60 datasheet (3M) |
| KM418RD8AD-RK70 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | KM418RD8AD-RK70 datasheet (3M) |
| KM418RD8AD-RK80 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | KM418RD8AD-RK80 datasheet (3M) |
| KM41C4000DJ-5 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50ns | Samsung Electronic | SOJ | 20 | 0°C | 70°C | KM41C4000DJ-5 datasheet (340K) |
| KM41C4000DJ-6 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns | Samsung Electronic | SOJ | 20 | 0°C | 70°C | KM41C4000DJ-6 datasheet (340K) |
| KM41C4000DJ-7 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns | Samsung Electronic | SOJ | 20 | 0°C | 70°C | KM41C4000DJ-7 datasheet (340K) |
| KM41C4000DLJ-5 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns | Samsung Electronic | SOJ | 20 | 0°C | 70°C | KM41C4000DLJ-5 datasheet (340K) |
| KM41C4000DLJ-6 | 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns | Samsung Electronic | SOJ | 20 | 0°C | 70°C | KM41C4000DLJ-6 datasheet (340K) |