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| KT8554BN | 1 chip CODEC | Samsung Electronic | N/A | 16 | -25°C | 70°C | KT8554BN datasheet (152K) |
| KT8555J | Time slot assignment circuit | Samsung Electronic | Cer DIP | 20 | -20°C | 125°C | KT8555J datasheet (96K) |
| KT8557BD | 1 chip CODEC | Samsung Electronic | N/A | 16 | -25°C | 70°C | KT8557BD datasheet (152K) |
| KT8557BJ | 1 chip CODEC | Samsung Electronic | Cer DIP | 16 | -25°C | 125°C | KT8557BJ datasheet (152K) |
| KT8557BN | 1 chip CODEC | Samsung Electronic | N/A | 16 | -25°C | 70°C | KT8557BN datasheet (152K) |
| MJD127 | PNP transistor, 100V, 8A | Samsung Electronic | N/A | 3 | -65°C | 150°C | MJD127 datasheet (194K) |
| MJD127 | PNP darlington transistor for high DC current gain, 100V, 8A | Samsung Electronic | N/A | 3 | -65°C | 150°C | MJD127 datasheet (194K) |
| MJD127-1 | PNP transistor, 100V, 8A | Samsung Electronic | IPAK | 3 | -65°C | 150°C | MJD127-1 datasheet (194K) |
| MJD127-1 | PNP darlington transistor for high DC current gain, 100V, 8A | Samsung Electronic | N/A | 3 | -65°C | 150°C | MJD127-1 datasheet (194K) |
| S1A0067X01-X0BO | 4.6W Audio power AMP | Samsung Electronic | N/A | 12 | -25°C | 75°C | S1A0067X01-X0BO datasheet (61K) |