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Datasheets Samsung Electronic

Part name
Description
Manufacturer
Package
Pins
Temp. Range
PDF datasheet
K4H561638B-TCA2256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.Samsung ElectronicN/A660°C | 70°CK4H561638B-TCA2 datasheet (658K)
K4H561638B-TCB0256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5.Samsung ElectronicN/A660°C | 70°CK4H561638B-TCB0 datasheet (658K)
K4H561638B-TLA0256 Mb DDR SDRAM. Version 0.3, 100 MHz, speed 10ns@CL2.Samsung ElectronicN/A660°C | 70°CK4H561638B-TLA0 datasheet (658K)
K4H561638B-TLA2256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.Samsung ElectronicN/A660°C | 70°CK4H561638B-TLA2 datasheet (658K)
K4H561638B-TLB0256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2.5.Samsung ElectronicN/A660°C | 70°CK4H561638B-TLB0 datasheet (658K)
K4R271669AM-CG6256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.Samsung ElectronicmicroBGA(mirrored CS620°C | 70°CK4R271669AM-CG6 datasheet (3M)
K4R271669AM-CK7256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.Samsung ElectronicmicroBGA(mirrored CS620°C | 70°CK4R271669AM-CK7 datasheet (3M)
K4R271669AM-CK8256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.Samsung ElectronicmicroBGA(mirrored CS620°C | 70°CK4R271669AM-CK8 datasheet (3M)
K4R271669AN-CG6256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz.Samsung ElectronicmicroBGA(normal CSP)620°C | 70°CK4R271669AN-CG6 datasheet (3M)
K4R271669AN-CK7256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.Samsung ElectronicmicroBGA(normal CSP)620°C | 70°CK4R271669AN-CK7 datasheet (3M)