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K4R271869B-NCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | K4R271869B-NCG6 datasheet (306K) |
K4R271869B-NCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | K4R271869B-NCK7 datasheet (306K) |
K4R271869B-NCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | K4R271869B-NCK8 datasheet (306K) |
K4R441869AM-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | K4R441869AM-CG6 datasheet (3M) |
K4R441869AM-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | K4R441869AM-CK7 datasheet (3M) |
K4R441869AM-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | K4R441869AM-CK8 datasheet (3M) |
K4R441869AN-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | K4R441869AN-CG6 datasheet (3M) |
K4R441869AN-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | K4R441869AN-CK7 datasheet (3M) |
K4R441869AN-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | K4R441869AN-CK8 datasheet (3M) |
K4R881869M-NCG6 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung Electronic | microBGA(normal CSP) | 56 | 0°C | 100°C | K4R881869M-NCG6 datasheet (3M) |