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| K4D26323RA-GC2A | 128Mbit DDR SDRAM, SSTL_2 interface, 350MHz | Samsung Electronic | FBGA | 144 | 0°C | 65°C | K4D26323RA-GC2A datasheet (303K) |
| K4D26323RA-GC33 | 128Mbit DDR SDRAM, SSTL_2 interface, 300MHz | Samsung Electronic | FBGA | 144 | 0°C | 65°C | K4D26323RA-GC33 datasheet (303K) |
| K4D26323RA-GC36 | 128Mbit DDR SDRAM, SSTL_2 interface, 275MHz | Samsung Electronic | FBGA | 144 | 0°C | 65°C | K4D26323RA-GC36 datasheet (303K) |
| K4E151611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung Electronic | SOJ | 42 | 0°C | 70°C | K4E151611D-J datasheet (553K) |
| K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung Electronic | N/A | 50 | 0°C | 70°C | K4E151611D-T datasheet (553K) |
| K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | Samsung Electronic | N/A | 44 | 0°C | 70°C | K4E151611D-T datasheet (553K) |
| K4E151612D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung Electronic | SOJ | 42 | 0°C | 70°C | K4E151612D-J datasheet (553K) |
| K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung Electronic | N/A | 50 | 0°C | 70°C | K4E151612D-T datasheet (553K) |
| K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung Electronic | N/A | 44 | 0°C | 70°C | K4E151612D-T datasheet (553K) |
| K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | Samsung Electronic | N/A | 44 | 0°C | 70°C | K4E151612D-T datasheet (553K) |