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Datasheets Samsung Electronic

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Description
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Package
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PDF datasheet
K6T4008U1C-GF10512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-powerSamsung ElectronicSOP32-40°C | 85°CK6T4008U1C-GF10 datasheet (186K)
K6T4008U1C-GF70512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-powerSamsung ElectronicSOP32-40°C | 85°CK6T4008U1C-GF70 datasheet (186K)
K6T4008U1C-GF85512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-powerSamsung ElectronicSOP32-40°C | 85°CK6T4008U1C-GF85 datasheet (186K)
K6T4008U1C-MB10512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-powerSamsung ElectronicN/A320°C | 70°CK6T4008U1C-MB10 datasheet (186K)
K6T4008U1C-MB70512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-powerSamsung ElectronicN/A320°C | 70°CK6T4008U1C-MB70 datasheet (186K)
K6T4008U1C-MB85512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-powerSamsung ElectronicN/A320°C | 70°CK6T4008U1C-MB85 datasheet (186K)
K6T4008U1C-MF10512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-powerSamsung ElectronicN/A32-40°C | 85°CK6T4008U1C-MF10 datasheet (186K)
K6T4008U1C-MF70512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-powerSamsung ElectronicN/A32-40°C | 85°CK6T4008U1C-MF70 datasheet (186K)
K6T4008U1C-MF85512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-powerSamsung ElectronicN/A32-40°C | 85°CK6T4008U1C-MF85 datasheet (186K)
K6T4008U1C-TB10512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-powerSamsung ElectronicN/A320°C | 70°CK6T4008U1C-TB10 datasheet (186K)