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Datasheets Samsung Electronic

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Description
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PDF datasheet
K6T4008U1C-TB70512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-powerSamsung ElectronicN/A320°C | 70°CK6T4008U1C-TB70 datasheet (186K)
K6T4008U1C-TB85512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-powerSamsung ElectronicN/A320°C | 70°CK6T4008U1C-TB85 datasheet (186K)
K6T4008U1C-TF10512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-powerSamsung ElectronicN/A32-40°C | 85°CK6T4008U1C-TF10 datasheet (186K)
K6T4008U1C-TF70512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-powerSamsung ElectronicN/A32-40°C | 85°CK6T4008U1C-TF70 datasheet (186K)
K6T4008U1C-TF85512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-powerSamsung ElectronicN/A32-40°C | 85°CK6T4008U1C-TF85 datasheet (186K)
K6T4008U1C-VB10512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-powerSamsung ElectronicN/A320°C | 70°CK6T4008U1C-VB10 datasheet (186K)
K6T4008U1C-VB70512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-powerSamsung ElectronicN/A320°C | 70°CK6T4008U1C-VB70 datasheet (186K)
K6T4008U1C-VB85512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-powerSamsung ElectronicN/A320°C | 70°CK6T4008U1C-VB85 datasheet (186K)
K6T4008U1C-VF10512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-powerSamsung ElectronicN/A32-40°C | 85°CK6T4008U1C-VF10 datasheet (186K)
K6T4008U1C-VF70512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-powerSamsung ElectronicN/A32-40°C | 85°CK6T4008U1C-VF70 datasheet (186K)