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K6T4008V1C-GF85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-power | Samsung Electronic | SOP | 32 | -40°C | 85°C | K6T4008V1C-GF85 datasheet (186K) |
K6T4008V1C-MB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008V1C-MB70 datasheet (186K) |
K6T4008V1C-MB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008V1C-MB85 datasheet (186K) |
K6T4008V1C-MF70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008V1C-MF70 datasheet (186K) |
K6T4008V1C-MF85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008V1C-MF85 datasheet (186K) |
K6T4008V1C-TB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008V1C-TB70 datasheet (186K) |
K6T4008V1C-TB85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008V1C-TB85 datasheet (186K) |
K6T4008V1C-TF70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008V1C-TF70 datasheet (186K) |
K6T4008V1C-TF85 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 85ns, LL-power | Samsung Electronic | N/A | 32 | -40°C | 85°C | K6T4008V1C-TF85 datasheet (186K) |
K6T4008V1C-VB70 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-power | Samsung Electronic | N/A | 32 | 0°C | 70°C | K6T4008V1C-VB70 datasheet (186K) |