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| 1S1835 | Silicon diode for high speed (fast recovery) rectifier applications | Toshiba | N/A | 2 | -40°C | 125°C | 1S1835 datasheet (130K) |
| 1S1885A | Silicon diode for general purpose rectifier applications | Toshiba | N/A | 2 | -40°C | 150°C | 1S1885A datasheet (131K) |
| 1SS293 | Schottky barrier diode for low voltage high speed switching | Toshiba | N/A | 3 | -55°C | 125°C | 1SS293 datasheet (111K) |
| 1SS294 | Schottky barrier diode for low voltage high speed switching | Toshiba | N/A | 3 | -55°C | 125°C | 1SS294 datasheet (114K) |
| 1SS295 | Schottky barrier diode for UHF band mixer applications | Toshiba | N/A | 3 | -55°C | 125°C | 1SS295 datasheet (109K) |
| 1SS348 | Scottky barrier diode for low voltage high speed switching applications | Toshiba | N/A | 3 | -40°C | 100°C | 1SS348 datasheet (110K) |
| 1SS349 | Scottky barrier diode for low voltage high speed switching applications | Toshiba | N/A | 3 | -40°C | 100°C | 1SS349 datasheet (109K) |
| 1SS352 | Silicon diode for ultra high speed switching applications | Toshiba | N/A | 2 | -55°C | 125°C | 1SS352 datasheet (121K) |
| 1SS385 | Schottky barrier diode for high speed switching applications | Toshiba | N/A | 3 | -40°C | 100°C | 1SS385 datasheet (124K) |
| 1SS387 | Silicon diode for ultra high speed switching applications | Toshiba | N/A | 2 | -55°C | 125°C | 1SS387 datasheet (125K) |