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| 1N5402 | 200 V, 3 A general diode | LRC | DO | 2 | N/A | N/A | 1N5402 datasheet (49K) |
| 1N5402 | 3.0A, 200V ultra fast recovery rectifier | MCC | N/A | - | N/A | N/A | 1N5402 datasheet (78K) |
| 1N5402 | Axial-lead standard recovery rectifier | Motorola | Issue C | 2 | -65°C | 170°C | 1N5402 datasheet (44K) |
| 1N5402 | High current plastic silicon rectifier. Max reccurent peak reverse voltage 200V. Max average forward rectified current 3.0A. | PAJIT | N/A | 2 | -55°C | 150°C | 1N5402 datasheet (51K) |
| 1N5402 | Silicon rectifier. VRRM = 200V. VRMS = 140V. VDC = 200V. Current 3.0A | RECTR | N/A | 2 | -65°C | 175°C | 1N5402 datasheet (23K) |
| 1N5402 | 200 V, 3.0 A silicon rectifier | SURGE | DO | 2 | -65°C | 125°C | 1N5402 datasheet (121K) |
| 1N5402 | 200 V, 3 A, high current plastic silicon rectifier | TEL | N/A | 2 | -55°C | 150°C | 1N5402 datasheet (155K) |
| 1N5402 | 200 V, 3 A, high current plastic silicon rectifier | TRSYS | DO | 2 | -55°C | 150°C | 1N5402 datasheet (155K) |
| 1N5402 | Silicon rectifier. Max recurrent peak reverse voltage 200V. Max RMS voltage 140V. Max DC blocking voltage 200V. Current 3.0A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | N/A | 2 | -65°C | 175°C | 1N5402 datasheet (278K) |
| 1N5402 | 200V, 3.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N5402 datasheet (39K) |