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| 1PS89SS06 | High-speed double diode. | Philips-Semiconductors | N/A | 3 | 0°C | 150°C | 1PS89SS06 datasheet (76K) |
| 1PS89SS06 | High-speed double diode. | Philips-Semiconductors | SOT490 | 3 | 0°C | 150°C | 1PS89SS06 datasheet (76K) |
| 1S10 | Schottky barrier diode | DCCOM | N/A | 2 | -65°C | 150°C | 1S10 datasheet (396K) |
| 1S10 | 1 Ampere schottky barrier rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 1.0 A. | PAJIT | N/A | 2 | -50°C | 125°C | 1S10 datasheet (45K) |
| 1S10 | 1 Ampere schottky barrier rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 1.0 A. | PAJIT | N/A | 2 | -50°C | 125°C | 1S10 datasheet (45K) |
| 1S1553 | 70 V, switching diode | LRC | N/A | 2 | N/A | N/A | 1S1553 datasheet (82K) |
| 1S1555 | 35 V, switching diode | LRC | N/A | 2 | N/A | N/A | 1S1555 datasheet (82K) |
| 1S1834 | Silicon diode for high speed (fast recovery) rectifier applications | Toshiba | N/A | 2 | -40°C | 125°C | 1S1834 datasheet (130K) |
| 1S1835 | Silicon diode for high speed (fast recovery) rectifier applications | Toshiba | N/A | 2 | -40°C | 125°C | 1S1835 datasheet (130K) |
| 1S1885A | Silicon diode for general purpose rectifier applications | Toshiba | N/A | 2 | -40°C | 150°C | 1S1885A datasheet (131K) |