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| HN27C256HG-85 | 256K (32K x 8-bit) UV and OTP EPROM, 85ns | HIT | CERDIP | 28 | 0°C | 70°C | HN27C256HG-85 datasheet (405K) |
| HN27C256HG-85 | 256K (32K x 8-bit) UV and OTP EPROM, 85ns | HIT | CERDIP | 28 | 0°C | 70°C | HN27C256HG-85 datasheet (405K) |
| HN27C256HP-10 | 256K (32K x 8-bit) UV and OTP EPROM, 100ns | HIT | PDIP | 28 | 0°C | 70°C | HN27C256HP-10 datasheet (405K) |
| HN27C4000G-12 | 524288-word x 8-Bit/262144-word x 16-bit CMOS UV erasable and programmable ROM, 120ns | HIT | CERDIP | 40 | 0°C | 70°C | HN27C4000G-12 datasheet (124K) |
| HN27C4000G-15 | 524288-word x 8-Bit/262144-word x 16-bit CMOS UV erasable and programmable ROM, 150ns | HIT | CERDIP | 40 | 0°C | 70°C | HN27C4000G-15 datasheet (124K) |
| HN29V51211T-50 | 512M AND type flash memory more than 32,113-sector (542,581,248-bit) | HIT | plastic TSOP I | 48 | 0°C | 70°C | HN29V51211T-50 datasheet (306K) |
| HN29W12811T-60 | 128M AND type flash memory more than 8,029-sector (135,657,984-bit) | HIT | plastic TSOP I | 48 | 0°C | 70°C | HN29W12811T-60 datasheet (315K) |
| HN29W25611T-50 | 256M AND type flash memory more than 16,057-sector (271,299,072-bit) | HIT | plastic TSOP I | 48 | 0°C | 70°C | HN29W25611T-50 datasheet (347K) |
| HN29W25611T-50H | 256M AND type flash memory more than 16,057-sector (271,299,072-bit) | HIT | plastic TSOP I | 48 | 0°C | 70°C | HN29W25611T-50H datasheet (331K) |
| HN4K03JU | Silicon N chanel junction type FET silicon NPN epitaxial planar type transistor for high speed/ananog switch | Toshiba | N/A | 5 | N/A | N/A | HN4K03JU datasheet (187K) |