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| 28LV64TM-3 | Speed: 200 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 28LV64TM-3 datasheet (42K) |
| 28LV64TM-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 28LV64TM-3 datasheet (42K) |
| 28LV64TM-4 | Speed: 250 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 28LV64TM-4 datasheet (42K) |
| 28LV64TM-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 28LV64TM-4 datasheet (42K) |
| 28LV64TM-5 | Speed: 300 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 28LV64TM-5 datasheet (42K) |
| 28LV64TM-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 28LV64TM-5 datasheet (42K) |
| 28LV64TM-6 | Speed: 400 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 28LV64TM-6 datasheet (42K) |
| 28LV64TM-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 28LV64TM-6 datasheet (42K) |
| 28M0 | Diode Array | Microsemi-Corporation | SEE_FACTORY | - | N/A | N/A | 28M0 datasheet (18K) |
| 29C010JC-1 | High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM | TRBIC | PLCC | 32 | 0°C | 70°C | 29C010JC-1 datasheet (52K) |