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Part name
Description
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PDF datasheet
2N305340V Vce, 0.7A Ic, 100MHz NPN bipolar transistorSemelab-Plc-TO39-N/A | N/A2N3053 datasheet (17K)
2N3053AGeneral purpose transistorBOCAN/A3-65°C | 200°C2N3053A datasheet (42K)
2N3054A55V Vce, 4A Ic, 0.8MHz NPN bipolar transistorSemelab-Plc-TO66-N/A | N/A2N3054A datasheet (15K)
2N3055Complementary silicon power transistorBOCAN/A2-65°C | 200°C2N3055 datasheet (174K)
2N3055Complementary silicon power transistorMOSPN/A2-65°C | 200°C2N3055 datasheet (167K)
2N3055Complementary silicon power transistorMotorolaN/A2-65°C | 200°C2N3055 datasheet (130K)
2N3055COMPLEMENTARY SILICON POWER TRANSISTORSSGS-Thomson-MicroelectronicsN/A-N/A | N/A2N3055 datasheet (47K)
2N3055NPN silicon power transistor. 15Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications.USHAN/A3-65°C | 200°C2N3055 datasheet (48K)
2N3055High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W.USHAN/A3-65°C | 200°C2N3055 datasheet (48K)
2N3055A60V Complementary silicon power transistorBOCAN/A2-65°C | 200°C2N3055A datasheet (200K)