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PDF datasheet
2N5086350mW PNP silicon AF low noise small signal transistorMEN/A3-55°C | 150°C2N5086 datasheet (191K)
2N5086Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW.USHAN/A30°C | 150°C2N5086 datasheet (76K)
2N5087 PNP General Purpose AmplifierFairchild-SemiconductorN/A3N/A | N/A2N5087 datasheet (58K)
2N5087350mW PNP silicon AF low noise small signal transistorMEN/A3-55°C | 150°C2N5087 datasheet (191K)
2N5087Amplifier transistorMotorolaN/A2-55°C | 150°C2N5087 datasheet (300K)
2N5087Amplifier Transistor PNPON-SemiconductorN/A3N/A | N/A2N5087 datasheet (300K)
2N508750 V, PNP general purpose transistorPhilips-SemiconductorsN/A3-65°C | 150°C2N5087 datasheet (49K)
2N5087Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW.USHAN/A30°C | 150°C2N5087 datasheet (76K)
2N5087RLRAAmplifier Transistor PNPON-SemiconductorN/A3N/A | N/A2N5087RLRA datasheet (300K)
2N5088 NPN General Purpose AmplifierFairchild-SemiconductorN/A3N/A | N/A2N5088 datasheet (211K)