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| 2N5401 | 150 V, PNP silicon amplifier transistor | BOCA | N/A | 3 | -55°C | 150°C | 2N5401 datasheet (144K) |
| 2N5401 | PNP General Purpose Amplifier | Fairchild-Semiconductor | N/A | 3 | N/A | N/A | 2N5401 datasheet (109K) |
| 2N5401 | PNP transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | N/A | 3 | -55°C | 150°C | 2N5401 datasheet (145K) |
| 2N5401 | 1W PNP complementary silicon general purpose high voltage transistor | ME | N/A | 3 | -55°C | 150°C | 2N5401 datasheet (165K) |
| 2N5401 | Amplifier Transistor PNP | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N5401 datasheet (177K) |
| 2N5401 | PNP high-voltage transistor. | Philips-Semiconductors | N/A | 3 | -65°C | 150°C | 2N5401 datasheet (47K) |
| 2N5401 | PNP high-voltage transistor | Philips-Semiconductors | SOT54 | - | N/A | N/A | 2N5401 datasheet (43K) |
| 2N5401 | Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. | USHA | N/A | 3 | 0°C | 150°C | 2N5401 datasheet (76K) |
| 2N5401C | PNP transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | N/A | 3 | -55°C | 150°C | 2N5401C datasheet (160K) |
| 2N5401RL1 | Amplifier Transistor PNP | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N5401RL1 datasheet (177K) |