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| 2N5486 | N-channel junction field effect transistor | ME | N/A | 3 | -55°C | 150°C | 2N5486 datasheet (150K) |
| 2N5486 | JFET VHF/UHF Amplifiers | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N5486 datasheet (278K) |
| 2N5486RLRP | JFET VHF/UHF Amplifiers | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N5486RLRP datasheet (278K) |
| 2N5550 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | N/A | - | N/A | N/A | 2N5550 datasheet (28K) |
| 2N5550 | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | N/A | 3 | -55°C | 150°C | 2N5550 datasheet (147K) |
| 2N5550 | 1W NPN complementary silicon general purpose high voltage transistor | ME | N/A | 3 | -55°C | 150°C | 2N5550 datasheet (165K) |
| 2N5550 | NPN high-voltage transistors | Philips-Semiconductors | SOT54 | - | N/A | N/A | 2N5550 datasheet (43K) |
| 2N5550 | Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. | USHA | N/A | 3 | 0°C | 150°C | 2N5550 datasheet (34K) |
| 2N5550RLRA | Amplifier Transistor NPN | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N5550RLRA datasheet (188K) |
| 2N5550RLRP | Amplifier Transistor NPN | ON-Semiconductor | N/A | 3 | N/A | N/A | 2N5550RLRP datasheet (188K) |