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PDF datasheet
2N5881Complementary silicon high-power transistorMOSPN/A2-65°C | 200°C2N5881 datasheet (180K)
2N588280 V, complementary NPN selicon high-power transistorBOCAN/A2-65°C | 200°C2N5882 datasheet (186K)
2N5882Complementary silicon high-power transistorMOSPN/A2-65°C | 200°C2N5882 datasheet (180K)
2N588360 V, complementary PNP selicon high-power transistorBOCAN/A2-65°C | 200°C2N5883 datasheet (190K)
2N5883Complementary silicon high-power transistorMOSPN/A2-65°C | 200°C2N5883 datasheet (183K)
2N588480 V, complementary PNP selicon high-power transistorBOCAN/A2-65°C | 200°C2N5884 datasheet (190K)
2N5884Complementary silicon high-power transistorMOSPN/A2-65°C | 200°C2N5884 datasheet (183K)
2N5884hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1SGS-Thomson-MicroelectronicsN/A-N/A | N/A2N5884 datasheet (68K)
2N588560 V, complementary NPN selicon high-power transistorBOCAN/A2-65°C | 200°C2N5885 datasheet (190K)
2N5885Complementary silicon high-power transistorMOSPN/A2-65°C | 200°C2N5885 datasheet (183K)