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| 2N5886 | 80 V, complementary NPN selicon high-power transistor | BOCA | N/A | 2 | -65°C | 200°C | 2N5886 datasheet (190K) |
| 2N5886 | Complementary silicon high-power transistor | MOSP | N/A | 2 | -65°C | 200°C | 2N5886 datasheet (183K) |
| 2N5886 | COMPLEMENTARY SILICON HIGH POWER TRANSISTOR | SGS-Thomson-Microelectronics | N/A | - | N/A | N/A | 2N5886 datasheet (41K) |
| 2N5911 | 25 V, dual N-Channel JFET high frequency amplifier | Calogic-LLC | N/A | 7 | -55°C | 150°C | 2N5911 datasheet (24K) |
| 2N5911 | Dual N-Channel silicon junction field-effect transistor | IFET | N/A | 8 | N/A | N/A | 2N5911 datasheet (66K) |
| 2N5911 | Dual N-Channel silicon junction field-effect transistor | IFET | SOIC | 8 | N/A | N/A | 2N5911 datasheet (66K) |
| 2N5912 | 25 V, dual N-Channel JFET high frequency amplifier | Calogic-LLC | N/A | 7 | -55°C | 150°C | 2N5912 datasheet (24K) |
| 2N5912 | Dual N-Channel silicon junction field-effect transistor | IFET | N/A | 8 | N/A | N/A | 2N5912 datasheet (66K) |
| 2N5912 | Dual N-Channel silicon junction field-effect transistor | IFET | SOIC | 8 | N/A | N/A | 2N5912 datasheet (66K) |
| 2N5952 | N-channel RF ampifier for electronic switching applications, 30V, 10mA | Fairchild-Semiconductor | N/A | 3 | -55°C | 150°C | 2N5952 datasheet (25K) |