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PDF datasheet
2N88660 V, silicon controlled rectifierBOCAN/A3N/A | N/A2N886 datasheet (31K)
2N887100 V, silicon controlled rectifierBOCAN/A3N/A | N/A2N887 datasheet (31K)
2N888150 V, silicon controlled rectifierBOCAN/A3N/A | N/A2N888 datasheet (31K)
2N889200 V, silicon controlled rectifierBOCAN/A3N/A | N/A2N889 datasheet (31K)
2N890300 V, silicon controlled rectifierBOCAN/A3N/A | N/A2N890 datasheet (31K)
2N891400 V, silicon controlled rectifierBOCAN/A3N/A | N/A2N891 datasheet (31K)
2N918Chip: geometry 9700; polarity NPNSECOAN/A-N/A | N/A2N918 datasheet (30K)
2N918Chip: 3.0V; 50mA geometry 0013; polarity NPNSECOAN/A14-65°C | 200°C2N918 datasheet (65K)
2N918hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 WSGS-Thomson-MicroelectronicsN/A-N/A | N/A2N918 datasheet (115K)
2N918CSM15V Vce, 0.003A Ic, 600MHz NPN bipolar transistorSemelab-Plc-LCC1-N/A | N/A2N918CSM datasheet (19K)