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| 2SA1011 | PNP epitaxial planar silicon transistor, high-voltag switching, AF power amp, 100W output predriver application | SANYO-Electric-Co--Ltd- | 2010C | 3 | N/A | N/A | 2SA1011 datasheet (90K) |
| 2SA1011 | PNP epitaxial silicon transistor. Low frequency power amplifier. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | N/A | 3 | N/A | N/A | 2SA1011 datasheet (69K) |
| 2SA1012 | 5Ampere PNP silicon power transistor | MOSP | N/A | 3 | -55°C | 150°C | 2SA1012 datasheet (116K) |
| 2SA1012 | Silicon PNP transistor for high current switching applications | Toshiba | N/A | 3 | -55°C | 150°C | 2SA1012 datasheet (199K) |
| 2SA1013 | Silicon PNP transistor for color TV vertical deflection output applications, color TV class B sound output applications | Toshiba | N/A | 3 | -55°C | 150°C | 2SA1013 datasheet (190K) |
| 2SA1015 | Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. | USHA | N/A | 3 | 0°C | 125°C | 2SA1015 datasheet (99K) |
| 2SA1015GR | 400mW PNP silicon transistor | ME | N/A | 3 | -55°C | 125°C | 2SA1015GR datasheet (73K) |
| 2SA1015Y | 400mW PNP silicon transistor | ME | N/A | 3 | -55°C | 125°C | 2SA1015Y datasheet (73K) |
| 2SA1016 | PNP epitaxial planar silicon transistor, high voltag, low-noise amp application | SANYO-Electric-Co--Ltd- | 2003A | 3 | N/A | N/A | 2SA1016 datasheet (127K) |
| 2SA1016K | PNP epitaxial planar silicon transistor, high voltag, low-noise amp application | SANYO-Electric-Co--Ltd- | 2003A | 3 | N/A | N/A | 2SA1016K datasheet (127K) |