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| 2SA1612-T2 | Silicon transistor | NEC-Electronics-Inc- | N/A | - | N/A | N/A | 2SA1612-T2 datasheet (192K) |
| 2SA1617 | Small signal general purpose transistor | HIT | MPAK | - | N/A | N/A | 2SA1617 datasheet (24K) |
| 2SA1617 | Small signal general purpose transistor | HIT | MPAK | - | N/A | N/A | 2SA1617 datasheet (24K) |
| 2SA1619 | Small signal silicon PNP transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | N/A | - | N/A | N/A | 2SA1619 datasheet (47K) |
| 2SA1619A | Small signal silicon PNP transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | N/A | - | N/A | N/A | 2SA1619A datasheet (47K) |
| 2SA1620 | Silicon PNP transistor for audio frequency amplifier applications | Toshiba | N/A | 3 | -55°C | 150°C | 2SA1620 datasheet (136K) |
| 2SA1621 | Silicon PNP transistor for audio frequency amplifier applications | Toshiba | N/A | 3 | -55°C | 150°C | 2SA1621 datasheet (140K) |
| 2SA1625 | High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. | USHA | N/A | 3 | 0°C | 150°C | 2SA1625 datasheet (105K) |
| 2SA1625-T | Silicon transistor | NEC-Electronics-Inc- | N/A | - | N/A | N/A | 2SA1625-T datasheet (194K) |
| 2SA1625-T/JD | Silicon transistor | NEC-Electronics-Inc- | N/A | - | N/A | N/A | 2SA1625-T/JD datasheet (194K) |