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| 2SC1968 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | N/A | 5 | N/A | N/A | 2SC1968 datasheet (129K) |
| 2SC1968A | Silicon NPN epitaxial planar type transistor | Mitsubishi-Electric-Corporation-Semiconductor-Group | N/A | 4 | N/A | N/A | 2SC1968A datasheet (132K) |
| 2SC1969 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | N/A | 4 | N/A | N/A | 2SC1969 datasheet (145K) |
| 2SC1970 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | N/A | 4 | N/A | N/A | 2SC1970 datasheet (154K) |
| 2SC1971 | NPN epitaxial planar type | Mitsubishi-Electric-Corporation-Semiconductor-Group | N/A | 4 | N/A | N/A | 2SC1971 datasheet (127K) |
| 2SC1972 | NPN transistor for 10 to 14 watts output power amplifiers in VHF band mobile radio applications | Mitsubishi-Electric-Corporation-Semiconductor-Group | N/A | 3 | -55°C | 175°C | 2SC1972 datasheet (130K) |
| 2SC1972 | NPN transistor for 10 to 14 watts output power amplifiers in VHF band mobile radio applications | Mitsubishi-Electric-Corporation-Semiconductor-Group | N/A | 3 | -55°C | 175°C | 2SC1972 datasheet (130K) |
| 2SC1980 | Silicon NPN epitaxial planer type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | N/A | - | N/A | N/A | 2SC1980 datasheet (37K) |
| 2SC1983 | NPN silicon darlington transistor. Switching regulators PWM inverters, solenoid and relay drivers. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | N/A | 3 | N/A | N/A | 2SC1983 datasheet (64K) |
| 2SC2001 | Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 700mA. | USHA | N/A | 3 | 0°C | 150°C | 2SC2001 datasheet (45K) |