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| 3EZ91D5 | 3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-5% tolerance. | JGD | N/A | 2 | -65°C | 175°C | 3EZ91D5 datasheet (146K) |
| 3EZ91D5 | 1 to 3 watt zener regulator diode | Motorola | N/A | 2 | -65°C | 200°C | 3EZ91D5 datasheet (156K) |
| 3EZ91D5 | Zener Voltage Regulator Diode | Microsemi-Corporation | N/A | - | N/A | N/A | 3EZ91D5 datasheet (69K) |
| 3KP10 | Ppk=3000W, Vc=18.8V transient voltage suppressor | MCC | N/A | - | N/A | N/A | 3KP10 datasheet (121K) |
| 3KP10 | 10.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE | N/A | 2 | -55°C | 175°C | 3KP10 datasheet (590K) |
| 3KP10 | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 10.00 V. Vbr = 11.10 V (min), 14.10 V (max). It = 1 mA. | PAJIT | N/A | 2 | -55°C | 175°C | 3KP10 datasheet (173K) |
| 3KP10 | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 10.00 V. Vbr = 11.10 V (min), 14.10 V (max). It = 1 mA. | PAJIT | N/A | 2 | -55°C | 175°C | 3KP10 datasheet (173K) |
| 3KP10 | 10 V, 1 mA, 3000 W, glass passivated junction transient voltage suppressor | SURGE | N/A | 2 | -55°C | 175°C | 3KP10 datasheet (206K) |
| 3KP10 | Breakdown volatge: 11.10V, 3000W transient voltage suppressor | WTE | N/A | 2 | -55°C | 175°C | 3KP10 datasheet (68K) |
| 3KP100 | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 100.00 V. Vbr = 111.00 V (min), 141.00 V (max). It = 1 mA. | PAJIT | N/A | 2 | -55°C | 175°C | 3KP100 datasheet (173K) |