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| 54S416T-5 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA | CRMT | TSOP | 54 | 0°C | 70°C | 54S416T-5 datasheet (1M) |
| 54S416T-6 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA | CRMT | TSOP | 54 | 0°C | 70°C | 54S416T-6 datasheet (1M) |
| 54S416T-7 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA | CRMT | TSOP | 54 | 0°C | 70°C | 54S416T-7 datasheet (1M) |
| 5503-CGT | Direct conversion receiver | TDK-Semiconductor-Corporation | TQFP | 48 | N/A | N/A | 5503-CGT datasheet (381K) |
| 5504-CGT | Direct conversion receiver | TDK-Semiconductor-Corporation | LQFP | 48 | N/A | N/A | 5504-CGT datasheet (145K) |
| 55C100B | Silicon Controlled Rectifier | Microsemi-Corporation | N/A | - | N/A | N/A | 55C100B datasheet (178K) |
| 55C120B | Silicon Controlled Rectifier | Microsemi-Corporation | N/A | - | N/A | N/A | 55C120B datasheet (178K) |
| 55C60B | Silicon Controlled Rectifier | Microsemi-Corporation | N/A | - | N/A | N/A | 55C60B datasheet (178K) |
| 55C80B | Silicon Controlled Rectifier | Microsemi-Corporation | N/A | - | N/A | N/A | 55C80B datasheet (178K) |
| 562CT-4 | CT thermistor, 5.6KOhm | SMTC | N/A | 2 | -50°C | 200°C | 562CT-4 datasheet (796K) |