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| 1N4001G | 50 V, 1 A, general purpose GPP diode | LRC | N/A | 2 | N/A | N/A | 1N4001G datasheet (51K) |
| 1N4001G | Rectifier. Repetitive peak reverse voltage 50 V. | Philips-Semiconductors | SOD57 | 2 | -65°C | 175°C | 1N4001G datasheet (53K) |
| 1N4001G | Rectifiers | Philips-Semiconductors | SOD57 | - | N/A | N/A | 1N4001G datasheet (34K) |
| 1N4001G | 50 V, rectifier | Philips-Semiconductors | SOD | 2 | -65°C | 175°C | 1N4001G datasheet (40K) |
| 1N4001G | Glass passivated junction plastic rectifier. Current 1.0A, VRRM = 50V, VRMS = 35V, VDC = 50V. | RECTR | N/A | 2 | -65°C | 175°C | 1N4001G datasheet (23K) |
| 1N4001G | Glass passivated junction rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 1.0 A. | SSE | N/A | 2 | -65°C | 150°C | 1N4001G datasheet (13K) |
| 1N4001G | 50V, 1.0A glass passivated rectifier | WTE | N/A | 2 | -65°C | 175°C | 1N4001G datasheet (53K) |
| 1N4001G | 50V, 1.0A glass passivated rectifier | WTE | N/A | 2 | -65°C | 175°C | 1N4001G datasheet (53K) |
| 1N4001G | Rectifier. Repetitive peak reverse voltage 50 V. | Philips-Semiconductors | SOD57 | 2 | -65°C | 175°C | 1N4001G datasheet (53K) |
| 1N4001G-T3 | 50V, 1.0A glass passivated rectifier | WTE | N/A | 2 | -65°C | 175°C | 1N4001G-T3 datasheet (53K) |