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| BCR5KM | 5A semiconductor for medium power use, insulated type, planar passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 125°C | BCR5KM datasheet (49K) |
| BCR5PM | 5A semiconductor for low power use, insulated type, planar passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 125°C | BCR5PM datasheet (93K) |
| BCR6AM | 6A semiconductor for medium power use, non-insulated type, planar passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 125°C | BCR6AM datasheet (91K) |
| BCR8CM | 8A semiconductor for medium power use, non-insulated type, planar passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 125°C | BCR8CM datasheet (92K) |
| BCR8PM | 8A semiconductor for medium power use, insulated type, planar passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 125°C | BCR8PM datasheet (93K) |
| BCR8PM-14 | 8A semiconductor for medium power use, insulated type, planar passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 125°C | BCR8PM-14 datasheet (61K) |
| BCR8PM-18 | 8A semiconductor for medium power use, insulated type, planar passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 125°C | BCR8PM-18 datasheet (61K) |
| BCR8PM-20 | 8A semiconductor for medium power use, insulated type, planar passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 125°C | BCR8PM-20 datasheet (60K) |
| BCR8UM | 8A semiconductor for medium power use, insulated type, glass passivation type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 3 | -40°C | 125°C | BCR8UM datasheet (55K) |
| CM1000HA-24H | 1000 Amp IGBT module for high power switching use insulated type | Mitsubishi Electric Corporation, Semiconductor Group | N/A | 4 | -40°C | 150°C | CM1000HA-24H datasheet (49K) |