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Description
Manufacturer
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PDF datasheet
1N5402G200 V, 3.0 A silicon rectifierEICN/A2-65°C | 175°C1N5402G datasheet (16K)
1N5402G200 V, 1 A glass passivated rectifierFORMON/A2-65°C | 175°C1N5402G datasheet (32K)
1N5402G200 V, 3 A, Glass passivated junction rectifierGODARDO2-65°C | 175°C1N5402G datasheet (220K)
1N5402G3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V.JGDN/A2-65°C | 150°C1N5402G datasheet (128K)
1N5402G200V, 3.0A glass passivated rectifierLITONN/A2-55°C | 150°C1N5402G datasheet (35K)
1N5402G200 V, 3 A, general purpose GPP diodeLRCDO2N/A | N/A1N5402G datasheet (50K)
1N5402GGlass passivated junction plastic rectifier. VRRM = 200V. VRMS = 140V. VDC = 200V. Current 3.0ARECTRN/A2-65°C | 175°C1N5402G datasheet (23K)
1N5402GGlass passivated junction rerctifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 3.0 A.SSEN/A2-65°C | 150°C1N5402G datasheet (16K)
1N5402GP200 V, 3 A glass passivated junction rectifierFAGORN/A2-65°C | 175°C1N5402GP datasheet (39K)
1N5402GP3.0A, 200V ultra fast recovery rectifierMCCN/A-N/A | N/A1N5402GP datasheet (78K)