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1N5404-TB | 400V, 3.0A silicon rectifier | WTE | N/A | 2 | -65°C | 125°C | 1N5404-TB datasheet (39K) |
1N5404G | Glass passivated rectifier. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 3.0 A. | BYTES | N/A | 2 | -65°C | 175°C | 1N5404G datasheet (151K) |
1N5404G | Glass passivated rectifier | DCCOM | N/A | 2 | -65°C | 175°C | 1N5404G datasheet (411K) |
1N5404G | 400V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | N/A | 2 | -65°C | 150°C | 1N5404G datasheet (59K) |
1N5404G | 400 V, 3.0 A silicon rectifier | EIC | N/A | 2 | -65°C | 175°C | 1N5404G datasheet (16K) |
1N5404G | 400 V, 1 A glass passivated rectifier | FORMO | N/A | 2 | -65°C | 175°C | 1N5404G datasheet (32K) |
1N5404G | 400 V, 3 A, Glass passivated junction rectifier | GODAR | DO | 2 | -65°C | 175°C | 1N5404G datasheet (220K) |
1N5404G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. | JGD | N/A | 2 | -65°C | 150°C | 1N5404G datasheet (128K) |
1N5404G | 400V, 3.0A glass passivated rectifier | LITON | N/A | 2 | -55°C | 150°C | 1N5404G datasheet (35K) |
1N5404G | 600 V, 3 A, general purpose GPP diode | LRC | DO | 2 | N/A | N/A | 1N5404G datasheet (50K) |