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Description
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PDF datasheet
G2SBA60Bridge RectifierGeneral-SemiconductorGBL-N/A | N/AG2SBA60 datasheet (110K)
G3067Active area size:1.3x1.3mm; reverse voltage:5V; GaAsP photodiode - diffusion type. For visible light detection. For analytical instruments and color identificationHAMAMN/A2-30°C | 80°CG3067 datasheet (172K)
G321EV5B000Liquid crystal display moduleSeiko-Epson-CorporationN/A14-20°C | 60°CG321EV5B000 datasheet (1M)
G321EV5B00XLiquid crystal display module with a touch panelSeiko-Epson-CorporationN/A140°C | 50°CG321EV5B00X datasheet (901K)
G321EV5R000Liquid crystal display moduleSeiko-Epson-CorporationN/A14-20°C | 60°CG321EV5R000 datasheet (1M)
G321EV5R00XLiquid crystal display module with a touch panelSeiko-Epson-CorporationN/A140°C | 50°CG321EV5R00X datasheet (901K)
G3297Active area size:1.3x1.3mm; reverse voltage:5V; GaAsP photodiode - diffusion type (red sensitivity extended type). For analytical instruments, color identificationHAMAMN/A2-30°C | 80°CG3297 datasheet (176K)
G3AGlass Passivated Junction RectifierGeneral-SemiconductorG3-N/A | N/AG3A datasheet (52K)
G3BGlass Passivated Junction RectifierGeneral-SemiconductorG3-N/A | N/AG3B datasheet (52K)
G3DGlass Passivated Junction RectifierGeneral-SemiconductorG3-N/A | N/AG3D datasheet (52K)