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| HBD060ZGE-A | 60 Watt, input voltage range:34-75V, output voltage 5/3.3V (2.27A) DC/DC converter | PWONE | DIP | 10 | -40°C | 100°C | HBD060ZGE-A datasheet (183K) |
| HBD136 | 80V 1.5A PNP power transistor | HSMC | N/A | 3 | -50°C | 150°C | HBD136 datasheet (36K) |
| HBD139 | 80V 1.5A NPN power transistor | HSMC | N/A | 3 | -65°C | 150°C | HBD139 datasheet (36K) |
| HBD140 | 80V 1.5A PNPpower transistor | HSMC | N/A | 3 | -65°C | 150°C | HBD140 datasheet (36K) |
| HBD237 | 5V NPN epitaxial planar transistor for medium power and switching applications | HSMC | N/A | 3 | -65°C | 150°C | HBD237 datasheet (24K) |
| HBD238 | 2A 5V PNP epitaxial planar transistor for medium power linear and switching applicications | HSMC | N/A | 3 | N/A | N/A | HBD238 datasheet (24K) |
| HBD437T | 1A complementary silicon power transistor for use in medium power linear and switching applications | HSMC | N/A | 3 | N/A | N/A | HBD437T datasheet (37K) |
| HBD438T | 1A complementary silicon power transistor for use in medium power linear and switching applications | HSMC | N/A | 3 | N/A | N/A | HBD438T datasheet (34K) |
| HBD675 | 4A 5V NPN epitaxial planar transistor for use as output devices in complementary general purpose amplifier applications | HSMC | N/A | 3 | N/A | N/A | HBD675 datasheet (32K) |
| HBD677 | 4A 5V NPN epitaxial planar transistor for use as output devices in complementary general purpose amplifier applications | HSMC | N/A | 3 | N/A | N/A | HBD677 datasheet (32K) |