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| HN58C257AT-85 | 265K EEPROM (32-kword x 8-bit) Ready/Busy and RES function, 85ns access time | HIT | plastic TSOP | 32 | 0°C | 70°C | HN58C257AT-85 datasheet (126K) |
| HN58C65FP-25 | 8192-word x 8-bit electrically erasable and programmable CMOS ROM, 250 ns | HIT | SOP | 28 | 0°C | 70°C | HN58C65FP-25 datasheet (152K) |
| HN58C65P-25 | 8192-word x 8-bit electrically erasable and programmable CMOS ROM, 250 ns | HIT | PDIP | 28 | 0°C | 70°C | HN58C65P-25 datasheet (152K) |
| HN58S256AT-15 | 256k EEPROM (32-kword x 8-bit), 150ns access time | HIT | plastic TSOP | 28 | 0°C | 70°C | HN58S256AT-15 datasheet (88K) |
| HN58S256AT-20 | 256k EEPROM (32-kword x 8-bit), 200ns access time | HIT | plastic TSOP | 28 | 0°C | 70°C | HN58S256AT-20 datasheet (88K) |
| HN58S65AT-15 | 64k EEPROM (8-kword x 8-bit) Ready/Busy function, 150ns access time | HIT | plastic TSOP | 28 | 0°C | 70°C | HN58S65AT-15 datasheet (93K) |
| HN58V1001FP-25 | 1M EEPROM (128-kword x 8-bit) ready/busy and RES function | HIT | plastic SOP | 32 | 0°C | 70°C | HN58V1001FP-25 datasheet (119K) |
| HN58V1001P-25 | 1M EEPROM (128-kword x 8-bit) ready/busy and RES function | HIT | plastic DIP | 32 | 0°C | 70°C | HN58V1001P-25 datasheet (119K) |
| HN58V1001T-25 | 1M EEPROM (128-kword x 8-bit) ready/busy and RES function | HIT | plastic TSOP | 32 | 0°C | 70°C | HN58V1001T-25 datasheet (119K) |
| HN58V256AFP-12 | 265K EEPROM (32-kword x 8-bit), 120ns access time | HIT | plastic SOP | 28 | 0°C | 70°C | HN58V256AFP-12 datasheet (118K) |