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| 28LV256TM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 28LV256TM-3 datasheet (41K) |
| 28LV256TM-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 28LV256TM-4 datasheet (41K) |
| 28LV256TM-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 28LV256TM-4 datasheet (41K) |
| 28LV256TM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 28LV256TM-4 datasheet (41K) |
| 28LV256TM-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 28LV256TM-5 datasheet (41K) |
| 28LV256TM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 28LV256TM-5 datasheet (41K) |
| 28LV256TM-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 28LV256TM-6 datasheet (41K) |
| 28LV256TM-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 28LV256TM-6 datasheet (41K) |
| 28LV64A-20/L | 64K (8Kx8) low voltage CMOS EEPROM | Microchip-Technology-Inc- | PLCC32 | 32 | 0°C | 70°C | 28LV64A-20/L datasheet (65K) |
| 28LV64A-20/P | 64K (8Kx8) low voltage CMOS EEPROM | Microchip-Technology-Inc- | N/A | 28 | 0°C | 70°C | 28LV64A-20/P datasheet (65K) |