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| 2N2906 | Chip: geometry 0600; polarity PNP | SECOA | N/A | - | N/A | N/A | 2N2906 datasheet (29K) |
| 2N2906A | PNP silicon planar switching transistor | BOCA | N/A | 3 | -65°C | 200°C | 2N2906A datasheet (44K) |
| 2N2906A | 400mW PNP silicon general purpose amplifier | ME | N/A | 3 | N/A | N/A | 2N2906A datasheet (103K) |
| 2N2906A | 60 V, PNP switching transistor | Philips-Semiconductors | TO | 3 | -65°C | 150°C | 2N2906A datasheet (52K) |
| 2N2906A | Chip: geometry 0600; polarity PNP | SECOA | N/A | - | N/A | N/A | 2N2906A datasheet (29K) |
| 2N2906A | hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA | SGS-Thomson-Microelectronics | N/A | - | N/A | N/A | 2N2906A datasheet (233K) |
| 2N2906E | Switching Transistor | Korea-Electronics-Co--Ltd- | N/A | - | N/A | N/A | 2N2906E datasheet (51K) |
| 2N2907 | 400mW PNP silicon planar epitaxial transistor | ME | N/A | 3 | N/A | N/A | 2N2907 datasheet (231K) |
| 2N2907 | 40 V, PNP switching transistor | Philips-Semiconductors | TO | 3 | -65°C | 150°C | 2N2907 datasheet (52K) |
| 2N2907 | Chip: geometry 0600; polarity PNP | SECOA | N/A | - | N/A | N/A | 2N2907 datasheet (31K) |